DocumentCode
3352022
Title
Single-electron memory based on floating-gated carbon nanotube field-effect transistors
Author
Ohori, Takahiro ; Ohno, Yasuhide ; Maehashi, Kenzo ; Inoue, Koichi ; Matsumoto, Kazuhiko
Author_Institution
Inst. of Sci. & Ind. Res., Osaka Univ., Osaka, Japan
fYear
2010
fDate
12-15 Oct. 2010
Firstpage
300
Lastpage
303
Abstract
We have fabricated floating-gated carbon nanotube field-effect transistors (CNTFETs). Au floating dots in the device are expected to act as charge storage nodes. The fabricated floating-gated CNTFETs clearly exhibited memory effect. Furthermore, single-electron memory was demonstrated based on floating-gated CNTFETs. Quantized shifts in the threshold voltage as a function of charging voltage and retention time were clearly observed. The quantized characteristics are attributed to the effect of single hole charging in the Au floating dots.
Keywords
carbon nanotubes; digital storage; field effect transistors; gold; nanotube devices; single electron devices; Au; C; CNTFET; charge storage nodes; floating dots; floating-gated carbon nanotube field-effect transistors; retention time; single-electron memory; threshold voltage; CNTFETs; Carbon nanotubes; Gold; Logic gates; Nonvolatile memory; Single electron memory; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE
Conference_Location
Monterey, CA
Print_ISBN
978-1-4244-8896-4
Type
conf
DOI
10.1109/NMDC.2010.5652573
Filename
5652573
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