DocumentCode :
3352133
Title :
Dielectric properties of various Ba(ZrxTi1-x)O3 ceramics under DC bias
Author :
Wada, S. ; Adachi, H. ; Chazono, H. ; Kishi, H. ; Tsurumi, T.
Author_Institution :
Dept. of Metall. & Ceramics Sci., Tokyo Inst. of Technol., Japan
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
503
Abstract :
Ba(ZrTi1-x)O3 (BZxT1-x) ceramics with high Zr contents are electrostrictive materials with low M electrostriction constants. However, a multilayer ceramic capacitor (MLCC) with BZ0.21T 0.79 composition exhibited a large strain of 0.6 μm at 0.1 kV/cm. Its apparent piezoelectric constant estimated, on the assumption that this MLCC is piezoelectrics, was 29,000 pm/V. This revealed that even if a piezoelectric constant of one layer is small, its multilayer ceramics can have ultrahigh piezoelectric constant. However, its strain vs. electric field behavior was not explained using an electrostrictive effect. Thus, dielectric properties of BZ0.21T0.79 ceramics under DC bias were investigated. As a result, the dielectric constants significantly decreased with increasing DC bias at room temperature. Thus, using a model considering DC bias dependence of dielectric constants, strain vs. electric field behavior of MLCC was explained. Temperature dependence of dielectric constants was also measured under DC bias. The dielectric peak shifted to higher temperature with increasing DC bias. The similar study was also done about BZxT1-x ceramics with other composition
Keywords :
barium compounds; ceramic capacitors; electrostriction; permittivity; piezoceramics; Ba(ZrxTi1-x)O3 ceramic; Ba(ZrTi)O3; DC bias; dielectric constant; dielectric properties; electrostriction constant; multilayer ceramic capacitor; piezoelectric constant; temperature dependence; Capacitive sensors; Capacitors; Ceramics; Dielectric constant; Dielectric materials; Dielectric measurements; Electrostriction; Nonhomogeneous media; Temperature dependence; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
ISSN :
1099-4734
Print_ISBN :
0-7803-5940-2
Type :
conf
DOI :
10.1109/ISAF.2000.941607
Filename :
941607
Link To Document :
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