Title :
A new concept and first development results of a PZT thin film actuator
Author :
Hoffmann, Marco ; Kuppers, H. ; Schneller, T. ; Bottger, U. ; Schnakenberg, U. ; Mokwa, W. ; Waser, R.
Author_Institution :
Electron. Mater. Res. Labs., RWTH Aachen, Germany
Abstract :
High piezoelectric coupling coefficients of PZT-based material systems can be employed for actuator functions in micro-electro-mechanical systems (MEMS) offering displacements and forces which outperform standard solutions. Within this project a stress compensated, PZT coated cantilever concept for a 6" silicon micro machining process was developed. The actuator was designed for a tip displacement of 10 μm by a cantilever length of 200 μm - 1000 μm. Therefore, silicon bulk micro machining technique was used in combination with CSD technique. In the context of this paper the deposition and integration processes for the different materials were described. Special attention was given to the Zr/Ti ratio of the PZT thin films to obtain a high piezoelectric coefficient. Si3N 4 was used for stress compensation of the deposited layers. For first characterizations XRD, SEM, microscopy, stress-, hysteresis-, and CV-measurements were used
Keywords :
X-ray diffraction; characteristics measurement; lead compounds; microactuators; micromachining; piezoelectric actuators; piezoelectric thin films; relays; scanning electron microscopy; 200 to 1000 micron; 6 inch; CSD technique; CV measurements; PZT; PbZrO3TiO3; SEM; XRD; actuator functions; bulk micro machining technique; cantilever concept; cantilever length; micro machining process; micro-electro-mechanical systems; piezoelectric coefficient; piezoelectric coupling coefficients; piezoelectric thin film actuator; stress compensation; tip displacement; Machining; Microelectromechanical systems; Micromechanical devices; Piezoelectric actuators; Piezoelectric films; Piezoelectric materials; Scanning electron microscopy; Silicon; Stress; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.941612