Title :
Chemical surface modification on SiO2 electret by DCDMS
Author :
Huamao, Lin ; Hongyan, Zhang ; Zhongfu, XIA ; Shaoqun, Shen ; Jianwei, Zhu
Author_Institution :
Pohl Inst. of Solid State Phys., Tongji Univ., Shanghai, China
Abstract :
In this paper, an advanced study on the chemical surface modification by dichlorodimethylsilane (DCDMS) was carried out. Different cleaning processes were tried to improve the surface state of the SiO2 film after chemical surface treatment by DCDMS. The stability of the space charges stored in these samples was investigated and the surface components of the samples were analyzed
Keywords :
dielectric thin films; electrets; organic compounds; silicon compounds; space charge; surface conductivity; surface potential; surface structure; surface treatment; ultrasonic cleaning; SiO2; SiO2 electret; SiO2 film; chemical surface modification; cleaning processes; dichlorodimethylsilane; negative corona charging; space charge stability; surface components; surface conductivity; surface potential decay curves; surface state; ultrasonic cleaning; Absorption; Chemicals; Cleaning; Conductive films; Electrets; Humidity; Solid state circuits; Space charge; Surface treatment; Thermal conductivity;
Conference_Titel :
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-2695-4
DOI :
10.1109/ISE.1996.578194
