DocumentCode :
3352410
Title :
C-V characteristics of SiO2 thin films prepared by sol-gel method
Author :
Liu, Yun ; Zhai, Jiwei ; Ying, Mingzi ; Zhang, Liangying ; Yao, Xi
Author_Institution :
Lab. of Electron. Mater. Res., Xi´´an Jiaotong Univ., China
fYear :
1996
fDate :
25-30 Sep 1996
Firstpage :
706
Lastpage :
709
Abstract :
SiO2 thin films were prepared by the sol-gel method. The electrical characteristics of MOS structures with multilayer SiO2 films were measured by means of a high frequency Capacitance-Voltage (C-V) method. Experiments show that there are many mobile ions and negative charge centers in SiO2 films. The flat-band voltage VFD shifts toward the positive side with increasing SiO2 film porosity
Keywords :
MIS structures; capacitance; insulating thin films; porosity; silicon compounds; sol-gel processing; C-V characteristics; MOS structures; Si-SiO2; SiO2; SiO2 film porosity; SiO2 thin films; electrical characteristics; flat-band voltage shift; high frequency capacitance-voltage method; mobile ions; multilayer SiO2 films; negative charge centers; sol-gel method; spin coating; Capacitance-voltage characteristics; Conductive films; Dielectric loss measurement; Optical films; Polymer films; Semiconductor films; Substrates; Thermal conductivity; Transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-2695-4
Type :
conf
DOI :
10.1109/ISE.1996.578195
Filename :
578195
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3352410
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