DocumentCode
3352506
Title
Fabrication and Testing of Single Photon Avalanche Detectors in the TSMC 0.18μm CMOS Technology
Author
Marwick, Miriam Adlerstein ; Andreou, Andreas G.
Author_Institution
Johns Hopkins Univ., Baltimore
fYear
2007
fDate
14-16 March 2007
Firstpage
741
Lastpage
744
Abstract
We report on the fabrication and preliminary testing of a single photon avalanche detectors (SPAD) fabricated in the TSMC 0.18μm standard CMOS technology (CM018). The detectors exhibit low dark count rate and robust geiger-mode operation at room temperature.
Keywords
CMOS integrated circuits; avalanche photodiodes; photodetectors; SPAD fabrication; TSMC CMOS technology; geiger-mode operation; single photon avalanche detector; size 0.18 μm; Avalanche photodiodes; CMOS process; CMOS technology; Circuits; Detectors; Fabrication; Foundries; Optoelectronic and photonic sensors; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Information Sciences and Systems, 2007. CISS '07. 41st Annual Conference on
Conference_Location
Baltimore, MD
Print_ISBN
1-4244-1063-3
Electronic_ISBN
1-4244-1037-1
Type
conf
DOI
10.1109/CISS.2007.4298405
Filename
4298405
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