The influence of tungsten contamination on electrical characteristics of MOS devices in semiconductor processing

Author

Kawahara, Wiroyuki ; Yoneda, Kenji ; Oishi, Hiroshi ; Todokoro, Yoshihiro

Author_Institution

Kyoto Res. Lab., Matsushita Electron. Corp., Kyoto, Japan

fYear

1995

fDate

17-19 Sep 1995

Firstpage

131

Lastpage

135

Abstract

The elimination of dedicated process equipment for silicide brings major benefits on equipment investment and pulsation-less production. To achieve the elimination of silicide dedicated process equipments, the influence and criteria of silicide-metal contamination on the electrical characteristics of ULSI MOS devices should be clarified. In this paper, we investigated the influence and criteria of W contamination on the dielectric breakdown reliability and P-N junction leakage current of MOS devices. In addition, feasibility study for common use of equipment such as furnace, wet cleaning, LP-CVD and plasma etcher is discussed

Keywords

MOS integrated circuits; ULSI; chemical vapour deposition; electric breakdown; integrated circuit metallisation; integrated circuit reliability; leakage currents; sputter etching; surface cleaning; CVD; MOS devices; P-N junction leakage current; ULSI; dielectric breakdown reliability; electrical characteristics; furnace; plasma etcher; semiconductor processing; silicide-metal contamination; wet cleaning; Contamination; Dielectric breakdown; Electric variables; Investments; MOS devices; P-n junctions; Production; Silicides; Tungsten; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on

Conference_Location

Austin, TX

Print_ISBN

0-7803-2928-7

Type

conf

DOI

10.1109/ISSM.1995.524375

Filename

524375