The research on the influences of relative factors for factual depletion layer characteristics in MOSFETs

The paper is about the characteristics of the factual depletion layer in MOSFETs. The aim is to analyze the influences of the relative factors for depletion layer. The results indicate that the relative factors, such as, the thickness of gate dioxide, the bias voltage, the doping concentration, are related to the depletion layer thickness in MOSFETs. The conclusions show that the depletion layer insulativity is exponential decrease with the impurities concentration in substrate when the concentration is less than about 1.0e16cm-3, and approximately increase by exponential relationship. So we should consider the relative factors influences for the characteristics of depletion region when we will acquire a more precise conclusions in MOSFETs.