DocumentCode :
3353018
Title :
Global planarization technique/CMP by high precision polishing and its characteristics
Author :
Karaki-Doy, Toshiroh ; Jeong, Haedo ; Nakagawa, Takeo ; Ohmori, Hitoshi ; Kasai, Toshio
Author_Institution :
Fac. of Educ., Saitama Univ., Urawa, Japan
fYear :
1995
fDate :
17-19 Sep 1995
Firstpage :
214
Lastpage :
217
Abstract :
In this research we built a prototype of planarization polishing or so-called Chemical and Mechanical Polishing (CMP) using high precision mechanical processing techniques, and thereafter, gained an understanding of basic processing characteristics using model device wafers. As a result, notedly better characteristics such as planarity and uniformity than those obtained to date have been achieved and thus we have gained guidelines so as to implement those characteristics as part of the semiconductor manufacturing equipment
Keywords :
polishing; semiconductor technology; CMP; chemical and mechanical polishing; global planarization; high precision mechanical processing; semiconductor manufacturing; Chemical engineering; Chemical industry; Fabrication; Kinematics; Logic devices; Planarization; Prototypes; Semiconductor device manufacture; Surface topography; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2928-7
Type :
conf
DOI :
10.1109/ISSM.1995.524394
Filename :
524394
Link To Document :
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