DocumentCode :
3353025
Title :
GaAs On Si By Low Temperature Laser Chemical Vapor Deposition
Author :
Ku, J.K. ; Choi, W.L. ; In, B.W. ; Chung, J.W. ; Kwon, O.D.
Author_Institution :
Pohang Institute of Science and Technology
fYear :
1990
fDate :
4-9 Nov 1990
Firstpage :
542
Lastpage :
543
Keywords :
Chemical lasers; Chemical technology; Chemical vapor deposition; Electrons; Gallium arsenide; Laser theory; Semiconductor films; Temperature; X-ray lasers; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN :
0-87942-550-4
Type :
conf
DOI :
10.1109/LEOS.1990.690671
Filename :
690671
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3353025
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