Theoretical study of the quantum efficiency of InGaAs/GaAs resonant cavity enhanced photodetectors

Author

Gryshchenko, S.V. ; Dyomin, A.A. ; Lysak, V.V.

Author_Institution

Kharkov Nat. Univ. of Radio Electron., Kharkov

fYear

2007

fDate

20-22 June 2007

Firstpage

20

Lastpage

22

Abstract

We present a theoretical analysis on the quantum efficiency of a resonant cavity InGaAs/GaAs p-i-n photodetector (PD) for the ultrashort optical connections. The numerical method of calculation of quantum efficiency combining a transfer matrix method and a energy conservation law is offered. Using anomalous dispersion (AD) mirror as the top mirror flat-topped QE spectrum has been obtained. Conditions for ideal flat-topped the spectral response have been received. We present a design with a maximum QE of 93.5% and 3 nm bandwidth at 0.02 dB below the peak.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; mirrors; optical resonators; photodetectors; InGaAs-GaAs; anomalous dispersion mirror; efficiency 93.5 percent; energy conservation law; p-i-n photodetector; quantum efficiency; resonant cavity; spectral response; transfer matrix method; ultrashort optical connections; Gallium arsenide; Indium gallium arsenide; Mirrors; Optical receivers; Optical reflection; Optical resonators; Optical sensors; Photodetectors; Quantum mechanics; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic Physics and Technology, 2007. OPT '07. International Workshop on

Conference_Location

Kharkov

Print_ISBN

1-4244-1322-2

Electronic_ISBN

1-4244-1322-2

Type

conf

DOI

10.1109/OPT.2007.4298526

Filename

4298526