Title :
Dry cleaning of Si and SiO2 surfaces using SiCl4 system
Author :
Sugino, Rinji ; Okui, Yoshiko ; Shigeno, Mayumi ; Okubo, Satoshi ; Takasaki, Kanetake ; Ito, Takashi
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We have found an effective dry cleaning technique using SiCl4 as a cleaning gas. Now, for the first time, surface Fe contaminants can be removed from an SiO2 surface using SiCl 4. A Cl2+SiCl4 combination allows dry cleaning of a Si surface at a lower temperature than the conventional UV/Cl2 method. Use of this Cl2+SiCl4 mixture gave good surface flatness and surface constitution for both Si and SiO2 surfaces
Keywords :
elemental semiconductors; semiconductor technology; silicon; silicon compounds; surface cleaning; surface contamination; Cl2+SiCl4 gas mixture; Fe contaminants; Si surface; Si:Fe; SiCl4; SiO2 surface; SiO2:Fe; dry cleaning; surface constitution; surface flatness; Atomic measurements; Constitution; Gases; Iron; Lamps; Pollution measurement; Silicon carbide; Surface cleaning; Surface contamination; Wavelength measurement;
Conference_Titel :
Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2928-7
DOI :
10.1109/ISSM.1995.524404
