• DocumentCode
    3353183
  • Title

    Dry cleaning of Si and SiO2 surfaces using SiCl4 system

  • Author

    Sugino, Rinji ; Okui, Yoshiko ; Shigeno, Mayumi ; Okubo, Satoshi ; Takasaki, Kanetake ; Ito, Takashi

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • fYear
    1995
  • fDate
    17-19 Sep 1995
  • Firstpage
    262
  • Lastpage
    265
  • Abstract
    We have found an effective dry cleaning technique using SiCl4 as a cleaning gas. Now, for the first time, surface Fe contaminants can be removed from an SiO2 surface using SiCl 4. A Cl2+SiCl4 combination allows dry cleaning of a Si surface at a lower temperature than the conventional UV/Cl2 method. Use of this Cl2+SiCl4 mixture gave good surface flatness and surface constitution for both Si and SiO2 surfaces
  • Keywords
    elemental semiconductors; semiconductor technology; silicon; silicon compounds; surface cleaning; surface contamination; Cl2+SiCl4 gas mixture; Fe contaminants; Si surface; Si:Fe; SiCl4; SiO2 surface; SiO2:Fe; dry cleaning; surface constitution; surface flatness; Atomic measurements; Constitution; Gases; Iron; Lamps; Pollution measurement; Silicon carbide; Surface cleaning; Surface contamination; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-2928-7
  • Type

    conf

  • DOI
    10.1109/ISSM.1995.524404
  • Filename
    524404
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3353183