• DocumentCode
    3353214
  • Title

    Low cost production by simplified processing

  • Author

    Ohmi, Tadahiro

  • Author_Institution
    Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
  • fYear
    1995
  • fDate
    17-19 Sep 1995
  • Firstpage
    277
  • Lastpage
    282
  • Abstract
    High throughput and low cost production with 100% yield is strictly demanded for ULSI manufacturing, where a decrease of minimum feature size of devices and an increase of wafer diameter is continuously enhanced for the future. It is realized by simplified processing due to a simplified device structure by introducing new concepts of devices and new materials to Si technology. Simplification of manufacturing processes becomes possible based on a full understanding of process mechanisms in a scientific manner, resulting in a dramatic reduction of process steps
  • Keywords
    ULSI; integrated circuit technology; surface cleaning; Si; Si technology; ULSI manufacturing; feature size; low cost production; processing; surface cleaning; throughput; wafer diameter; yield; Argon; Chemical processes; Costs; Manufacturing processes; Moisture; Production; Semiconductor device manufacture; Surface cleaning; Surface contamination; Water pollution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-2928-7
  • Type

    conf

  • DOI
    10.1109/ISSM.1995.524407
  • Filename
    524407