DocumentCode
3353229
Title
Analysis of RF plasma using electrical equivalent circuit
Author
Hirayama, Masaki ; Ino, Kazuhide ; Ohmi, Tadahiro
Author_Institution
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
fYear
1995
fDate
17-19 Sep 1995
Firstpage
283
Lastpage
286
Abstract
The electrical equivalent circuits of RF plasmas have been obtained by use of the accurate probe measurements and HSPICE simulation. Using the obtained equivalent circuits, the electrical characteristics of SF6 and Ar plasmas have been compared. The SF6 plasma displays sinusoidal waveforms of the plasma potential for the capacitive sheath characteristics. On the other hand, in Ar plasma the displacement current through the grounded electrode sheath is comparable to the conduction current. The plasma potential in Ar plasma has significantly higher harmonics for the nonlinear characteristics of the grounded electrode sheath. This analysis method serves as an essential tool for modelling RF plasmas
Keywords
SPICE; digital simulation; equivalent circuits; integrated circuit manufacture; plasma applications; probes; semiconductor process modelling; Ar; HSPICE simulation; RF plasma; SF6; capacitive sheath characteristics; displacement current; electrical equivalent circuit; grounded electrode sheath; nonlinear characteristics; plasma potential; probe measurements; semiconductor manufacturing; sinusoidal waveforms; Argon; Electrodes; Equivalent circuits; Plasma displays; Plasma measurements; Plasma properties; Plasma sheaths; Plasma simulation; Plasma waves; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
Conference_Location
Austin, TX
Print_ISBN
0-7803-2928-7
Type
conf
DOI
10.1109/ISSM.1995.524408
Filename
524408
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