• DocumentCode
    3353229
  • Title

    Analysis of RF plasma using electrical equivalent circuit

  • Author

    Hirayama, Masaki ; Ino, Kazuhide ; Ohmi, Tadahiro

  • Author_Institution
    Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
  • fYear
    1995
  • fDate
    17-19 Sep 1995
  • Firstpage
    283
  • Lastpage
    286
  • Abstract
    The electrical equivalent circuits of RF plasmas have been obtained by use of the accurate probe measurements and HSPICE simulation. Using the obtained equivalent circuits, the electrical characteristics of SF6 and Ar plasmas have been compared. The SF6 plasma displays sinusoidal waveforms of the plasma potential for the capacitive sheath characteristics. On the other hand, in Ar plasma the displacement current through the grounded electrode sheath is comparable to the conduction current. The plasma potential in Ar plasma has significantly higher harmonics for the nonlinear characteristics of the grounded electrode sheath. This analysis method serves as an essential tool for modelling RF plasmas
  • Keywords
    SPICE; digital simulation; equivalent circuits; integrated circuit manufacture; plasma applications; probes; semiconductor process modelling; Ar; HSPICE simulation; RF plasma; SF6; capacitive sheath characteristics; displacement current; electrical equivalent circuit; grounded electrode sheath; nonlinear characteristics; plasma potential; probe measurements; semiconductor manufacturing; sinusoidal waveforms; Argon; Electrodes; Equivalent circuits; Plasma displays; Plasma measurements; Plasma properties; Plasma sheaths; Plasma simulation; Plasma waves; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-2928-7
  • Type

    conf

  • DOI
    10.1109/ISSM.1995.524408
  • Filename
    524408