DocumentCode :
3353258
Title :
Advanced water purification system for sub-half-micron devices
Author :
Ban, Cozy ; Sato, Kazunao ; Hirayama, Makoto
Author_Institution :
Mitsubishi Electr. Corp., Japan
fYear :
1995
fDate :
17-19 Sep 1995
Firstpage :
292
Abstract :
Summary form only given. Sub-half-micron devices have fine patterns and thin films. Therefore, the wafer surface is very sensitive to contamination. It is important to keep the wafer surface clean for producing high yield. Purified water plays a significant role in cleaning silicon wafers, because wafers are rinsed with water at the end of every process. So water, the final cleaning agent, has to be highly purified. In current water purifying systems, it is difficult to accomplish the water quality targets for sub-half-micron devices. We developed a new water purification system with three new technological innovations: the ion exchange resins capable of absorbing particles, the unit to ionize silicate impurities, and a two-stage vacuum tower. Optimal organization of these technologies makes it possible to achieve the highest purity with reduced cost. We present the technologies on effective removal of particles, efficient elimination of silicate impurities, and strict control of dissolved oxygen
Keywords :
VLSI; integrated circuit technology; integrated circuit yield; ion exchange; surface cleaning; water treatment; Si; cleaning agent; dissolved oxygen; ion exchange resins; silicate impurities; sub-half-micron devices; two-stage vacuum tower; wafer surface cleaning; water purification system; water quality targets; yield; Impurities; Purification; Resins; Silicon; Surface cleaning; Surface contamination; Technological innovation; Thin film devices; Vacuum systems; Water pollution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2928-7
Type :
conf
DOI :
10.1109/ISSM.1995.524410
Filename :
524410
Link To Document :
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