Title :
Possibility of temperature regime expansion in near-an mid MQ lasers
Author :
Mashoshyna, O.V. ; Joullie, A.
Author_Institution :
Kharkov Nat. Univ. of Radio Electron., Kharkov
Abstract :
It is observed the existing methods of temperature regime expansion in MQW lasers of near-and mid-IR semiconductor heterostructures. Also it is shown new possibilities to extend working temperatures of the considered devices.
Keywords :
Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor quantum wells; thermal expansion; Auger recombination; InGaAsSb; asymmetric heterostructure lasers; mid-IR MQW lasers; near-IR MQW lasers; quantum well; semiconductor heterostructures; semiconductor laser; temperature regime expansion; Fiber lasers; Laser stability; Optical fibers; Power lasers; Radiative recombination; Semiconductor lasers; Surface emitting lasers; Temperature distribution; Temperature sensors; Threshold current; Auger recombination; InGaAsSb; asymmetric heterostructure; mid-infrared; near-infrared; quantum well; semiconductor laser;
Conference_Titel :
Optoelectronic Physics and Technology, 2007. OPT '07. International Workshop on
Conference_Location :
Kharkov
Print_ISBN :
1-4244-1322-2
Electronic_ISBN :
1-4244-1322-2
DOI :
10.1109/OPT.2007.4298536
