DocumentCode
3353397
Title
Towards a sub-1 V CMOS voltage reference
Author
Najafizadeh, Laleh ; Filanovsky, Igor M.
Author_Institution
Dept. of Electr. & Comput. Eng., Alberta Univ., Edmonton, Alta., Canada
Volume
1
fYear
2004
fDate
23-26 May 2004
Abstract
A sub-1-V CMOS voltage reference which takes advantage of summing the gate-source voltages of two NMOS transistors operating in saturation region is presented. Both transistors are working below zero temperature coefficient point and thus the voltage reference is able to operate with low supply voltage. The circuit is implemented in a standard 0.18-μm CMOS process and gives a temperature coefficient of 4 ppm/°C in the range of -50°C to 150°C.
Keywords
CMOS integrated circuits; MOSFET circuits; reference circuits; temperature; -50 to 150 C; 0.18 microns; 1 V; CMOS voltage reference; NMOS transistors; analog electronics; gate-source voltages; low supply voltage; saturation region; temperature coefficient; temperature effects; threshold voltage; CMOS technology; Circuits; Diodes; Low voltage; MOSFETs; Photonic band gap; Power supplies; Temperature; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN
0-7803-8251-X
Type
conf
DOI
10.1109/ISCAS.2004.1328129
Filename
1328129
Link To Document