Title :
Towards a sub-1 V CMOS voltage reference
Author :
Najafizadeh, Laleh ; Filanovsky, Igor M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Alberta Univ., Edmonton, Alta., Canada
Abstract :
A sub-1-V CMOS voltage reference which takes advantage of summing the gate-source voltages of two NMOS transistors operating in saturation region is presented. Both transistors are working below zero temperature coefficient point and thus the voltage reference is able to operate with low supply voltage. The circuit is implemented in a standard 0.18-μm CMOS process and gives a temperature coefficient of 4 ppm/°C in the range of -50°C to 150°C.
Keywords :
CMOS integrated circuits; MOSFET circuits; reference circuits; temperature; -50 to 150 C; 0.18 microns; 1 V; CMOS voltage reference; NMOS transistors; analog electronics; gate-source voltages; low supply voltage; saturation region; temperature coefficient; temperature effects; threshold voltage; CMOS technology; Circuits; Diodes; Low voltage; MOSFETs; Photonic band gap; Power supplies; Temperature; Threshold voltage; Transconductance;
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
DOI :
10.1109/ISCAS.2004.1328129
