• DocumentCode
    3353567
  • Title

    Ultrafast photoconductive detectors based on semiconductors with long carrier lifetimes

  • Author

    Tani, M. ; Sakai, K. ; Mimura, H.

  • Author_Institution
    Commun. Res. Lab., Kansai Adv. Res. Center, Iwaoka, Japan
  • fYear
    1996
  • fDate
    5-5 Dec. 1996
  • Firstpage
    17
  • Lastpage
    20
  • Abstract
    Photoconductive switches based on semiconductors with long carrier lifetimes were fabricated and used to detect terahertz (THz) radiation pulses. The detector responses were compared with those of a photoconductive detector based on a semiconductor with a very short carrier lifetime.
  • Keywords
    carrier lifetime; high-speed optical techniques; photoconducting switches; photodetectors; carrier lifetimes; detector response; photoconductive switches; terahertz radiation pulse detection; ultrafast photoconductive detectors; Charge carrier lifetime; Dipole antennas; Gallium arsenide; Laser excitation; Optical pulse generation; Optical pulses; Photoconducting devices; Photoconductivity; Pulse measurements; Radiation detectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Photonics, 1996. MWP '96. Technical Digest., 1996 Internatonal Topical Meeting on
  • Conference_Location
    Kyoto, Japan
  • Print_ISBN
    0-7803-3129-X
  • Type

    conf

  • DOI
    10.1109/MWP.1996.662056
  • Filename
    662056
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3353567