Design of a SiGe low-noise amplifier for 3.1-10.6 GHz ultra-wideband radio

Author

Bo Shi ; Yan Wah Chia

Author_Institution

Inst. for Infocomm Res., Singapore, Singapore

Volume

1

fYear

2004

fDate

23-26 May 2004

Abstract

This paper presents the design of a low-noise amplifier (LNA) targeted for ultra-wideband (UWB) applications. The design consists of two gain stages in multiple feedback loops to achieve broadband gain together with low noise figure and good input impedance match. Implemented with a 0.25μm SiGe BiCMOS process and housed in a standard LPCC package, the LNA chip gives 18.5 dB gain and 10.3GHz - 3 dB bandwidth (2.7 - 13 GHz) while consuming less than 19 mW of dc power through a 3 V supply. Over the 3.1 - 10.6 GHz UWB frequency band allocated by the FCC, noise figure of 2.1 - 3.3 dB and input return loss greater than 12.5 dB have been achieved.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; feedback amplifiers; integrated circuit noise; integrated circuit packaging; radio networks; wideband amplifiers; 0.25 microns; 10.3 GHz; 18.5 dB; 19 mW; 2.1 to 3.3 dB; 2.7 to 13 GHz; 3 V; 3.1 to 10.6 GHz; LNA chip; LPCC package; SiGe; SiGe BiCMOS; UWB frequency band; broadband gain; impedance match; low-noise amplifier; multiple feedback loops; noise figure; ultra-wideband radio; BiCMOS integrated circuits; Feedback loop; Gain; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Noise figure; Packaging; Silicon germanium; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on

Print_ISBN

0-7803-8251-X

Type

conf

DOI

10.1109/ISCAS.2004.1328141

Filename

1328141