DocumentCode
3353958
Title
High resolution AFM Moiré technique for the detection of defects in nano structure
Author
Park, Jin-Hyoung ; Lee, Soon-Bok
Author_Institution
Dept. of Mech. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon
fYear
2007
fDate
19-22 Nov. 2007
Firstpage
1
Lastpage
4
Abstract
Moire interferometry is a useful technique to assess the reliability of electronic package because Moire interferometry can measure the whole-field and real-time deformations. The optical limitation of Moire interferometry makes ambiguous the shear strain of a micro area. An atomic force microscope (AFM) is used to measure the profile of a micro site. High resolution of AFM can apply to the Moire technique. AFM Moire technique is useful to measure the strain of a small area. Also, AFM Moire technique is used to detect of defects in nano structure. In this research, the method to accurately measure the deformation of a small area by using AFM Moire is proposed. A phase-shifting method is applied to improve the resolution of AFM Moire.
Keywords
atomic force microscopy; electronics packaging; interferometry; nanotechnology; AFM Moire technique; Moire interferometry; atomic force microscope; electronic package reliability; nanostructure defect detection; phase-shifting method; Area measurement; Atom optics; Atomic force microscopy; Atomic measurements; Electron optics; Force measurement; Gratings; Optical interferometry; Scanning electron microscopy; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Materials and Packaging, 2007. EMAP 2007. International Conference on
Conference_Location
Daejeon
Print_ISBN
978-1-4244-1909-8
Electronic_ISBN
978-1-4244-1910-4
Type
conf
DOI
10.1109/EMAP.2007.4510335
Filename
4510335
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