Title :
A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides
Author :
Degraeve, R. ; De Blauwe, J. ; Ogier, J.L. ; Roussel, Ph. ; Greoseneken, G. ; Maes, H.E.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
In this paper, the impact of oxide nitridation on high field FN-degradation is studied. Nitridation causes a significant decrease of the oxide trap generation and also introduces an additional polarity dependence of the degradation, which can be modelled by taking into account the asymmetry of the nitrogen profile in the oxide. The nitridation effects on trap generation are correlated with changes in the Weibull slope of the Q/sub BD/-distribution.
Keywords :
VLSI; Weibull distribution; dielectric thin films; electron traps; integrated circuit modelling; integrated circuit reliability; nitridation; statistical analysis; FN-degradation; Q/sub BD/-distribution; VLSI; Weibull slope; asymmetry; high-field degradation; nitrided oxides; oxide nitridation; oxide trap generation; polarity dependence; reduced trap generation; Annealing; Degradation; Density measurement; Dielectrics; Electric breakdown; Electron traps; Filling; Nitrogen; Performance evaluation; Stress measurement;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553595
