Effect of a noble annealing system on nickel silicide formation

Author

Jung, Sug-Woo ; Kim, Hyun-Su ; Jung, Eun-Ji ; Cheong, Seong-Hwee ; Yun, Jong-Ho ; Roh, Kwan-Jong ; Ja-Hum Ku ; Choi, Gil-Heyun ; Kim, Sung-Tae ; Chung, U-in ; Moon, Joo-Tae ; Ryu, Byung-Il

Author_Institution

Semicond. R&D Center, Samsung Electron. Co. Ltd., Gyeonggi-Do

fYear

2004

fDate

2004

Firstpage

121

Lastpage

124

Abstract

We have investigated the formation of NiSi dependence on three types of annealing systems: annealing systems-I, -II, and -III. The annealing system-I transfers heat by radiation from tungsten halogen lamps in a N₂ atmosphere to the wafer and the annealing system-II by conduction from a heated hot plate in vacuum to the wafer. On the other hand, annealing system-III uses a combination of convective and gas phase conductive heat transfer in a N₂ atmosphere for wafer heating. Smooth surface and interface morphologies and good electrical properties were obtained for NiSi layers formed using annealing system-III. The wafer heat transfer mechanism from the heat source to wafer is shown to influence the morphological and electrical properties of NiSi

Keywords

annealing; elemental semiconductors; heat conduction; nickel compounds; semiconductor technology; semiconductor-metal boundaries; silicon; surface morphology; NiSi-Si; annealing system; electrical properties; gas phase conductive heat transfer; heat source; heated hot plate; interface morphologies; nickel silicide formation; radiation; smooth surface morphologies; tungsten halogen lamps; Annealing; Atmosphere; Heat transfer; Lamps; Nickel; Resistance heating; Silicides; Surface morphology; Tungsten; Vacuum systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. 12th IEEE International Conference on

Conference_Location

Portland, OR

Print_ISBN

0-7803-8477-6

Type

conf

DOI

10.1109/RTP.2004.1441946

Filename

1441946