Leakage current, reliability characteristics, and boron penetration of ultra-thin (32-36 /spl Aring/) O/sub 2/-oxides and N/sub 2/O/NO oxynitrides

Author

Chuan Lin ; Chou, A.I. ; Kumar, K. ; Chowdhury, P. ; Lee, J.C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

331

Lastpage

334

Abstract

In this paper, we investigate the effects of BF/sub 2/-implantation into the Si substrates and boron penetration from P/sup +/ poly gate on initial oxide leakage current and reliability of ultra-thin gate oxides (O/sub 2/ and N/sub 2/O/NO oxynitrides with thickness of 32-36 /spl Aring/). It is demonstrated that N/sub 2/O growth is less susceptible to substrate conditions than O/sub 2/ growth. Moreover, N/sub 2/O-oxides exhibit lower initial leakage current than O/sub 2/-oxides, which is very important for low power applications.

Keywords

MOS capacitors; MOSFET; dielectric thin films; ion implantation; leakage currents; semiconductor device reliability; 32 to 36 angstrom; CMOSFETs; MOS capacitors; N/sub 2/O-NO; P/sup +/ poly gate; Si; initial oxide leakage current; low power applications; reliability characteristics; substrate conditions; ultra-thin gate oxides; Annealing; Boron; Degradation; Design for quality; Implants; Lead compounds; Leakage current; MOS devices; Oxidation; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553596

Filename

553596