DocumentCode :
3354662
Title :
Alignment mark shift due to thermal non-uniformity: what is moving?
Author :
Lojek, B. ; Whiteman, M. ; Starzinski, K.
Author_Institution :
ATMEL Corp., Colorado Springs, CO
fYear :
2004
fDate :
2004
Firstpage :
150
Lastpage :
155
Abstract :
The ITRS working group has identified mask alignment and overlay control as a technology roadblock with no known solutions beyond the 65 nm node. Mechanical stress induced by thermal processing critically influences the distortion and warpage of wafers. This paper investigates the wafer distortion between source/drain and contact masking steps. In the experimental part of this work we demonstrated that certain temperature non-uniformity patterns with uniformity less than 1% generate bigger warpage of processed wafer than a less uniform pattern with a higher non-uniformity
Keywords :
rapid thermal annealing; semiconductor technology; thermal stresses; ITRS working group; alignment mark shift; contact masking step; mask alignment; mechanical stress; overlay control; source/drain step; thermal nonuniformity; thermal processing; wafer distortion; Internal stresses; Optical distortion; Optical films; Rapid thermal annealing; Rapid thermal processing; Semiconductor films; Silicon; Substrates; Temperature; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. 12th IEEE International Conference on
Conference_Location :
Portland, OR
Print_ISBN :
0-7803-8477-6
Type :
conf
DOI :
10.1109/RTP.2004.1441955
Filename :
1441955
Link To Document :
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