Very low internal loss, 1.5 /spl mu/m wavelength SCH-MQW InGaAsP/InP laser diodes with broadened-waveguides

Author

Xu, L. ; Garbuzov, D. ; Forrest, S. ; Menna, R. ; Martinelli, R. ; Connolly, J.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

352

Abstract

We have shown that the cladding layer free-carrier absorption is the main source of internal loss in the studied InGaAsP/InP SCH-MQW laser structures. Very low internal loss (1.3 cm/sup -1/) and low threshold current density (260 A/cm/sup 2/ for a 2 mm cavity) are obtained with the broadened-waveguide laser structure. High efficiency lasers can be made using this structure.

Keywords

claddings; current density; gallium arsenide; indium compounds; laser transitions; light absorption; optical losses; quantum well lasers; waveguide lasers; 1.5 /spl mu/m wavelength SCH-MQW InGaAsP/InP laser diodes; 1.5 mum; InGaAsP-InP; broadened-waveguides; cavity; cladding layer free-carrier absorption; high efficiency lasers; internal loss; low threshold current density; very low internal loss; Absorption; Diode lasers; Indium phosphide; Optical design; Optical losses; Optical waveguides; Pulse measurements; Quantum well lasers; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565278

Filename

565278