GaAsSb/GaAs 1.3-/spl mu/m-VCSELs for 10 G-bit Ethernet

Author

Nishi, K. ; Anan, T. ; Yamada, M. ; Kurihara, K. ; Tokutome, K. ; Kamei, A. ; Sugou, S.

Author_Institution

Opt. Interconnection, NEC Lab., Ibaraki, Japan

fYear

2001

fDate

July 30 2001-Aug. 1 2001

Abstract

We demonstrated high-performance GaAsSb VCSELs emitting at 1.295 /spl mu/m with a low threshold current of 1.1 mA and a maximum cw operating temperature of 70 C. After the high-frequency modulation characteristics have been validated, the GaAsSb VCSELs should be viable low-cost light sources for high bandwidth fiber communications.

Keywords

III-V semiconductors; electro-optical modulation; gallium arsenide; gallium compounds; laser transitions; optical fibre LAN; optical transmitters; quantum well lasers; surface emitting lasers; 1.1 mA; 1.925 mum; Ethernet; GaAsSb; GaAsSb VCSELs; GaAsSb/GaAs 1.3-/spl mu/m-VCSELs; high bandwidth fiber communications; high-frequency modulation characteristics; low threshold current; low-cost light sources; maximum cw operating temperature; Apertures; Capacitive sensors; Chemicals; Electrons; Gallium arsenide; Surface morphology; Temperature distribution; Threshold current; Vertical cavity surface emitting lasers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Lasers and Applications/Ultraviolet and Blue Lasers and Their Applications/Ultralong Haul DWDM Transmission and Networking/WDM Components, 2001. Digest of the LEOS Summer Topica

Conference_Location

Copper Mountain, CO, USA

Print_ISBN

0-7803-7100-3

Type

conf

DOI

10.1109/LEOSST.2001.941891

Filename

941891