Long wavelength InGaAsN/GaAs edge emitting lasers with low threshold current density grown by MOCVD

Author

Murray, C. ; Xin, H. ; Newman, F.

Author_Institution

Emcore Corp., Albuquerque, NM, USA

fYear

2001

fDate

July 30 2001-Aug. 1 2001

Abstract

By using recently obtained results of threshold current densities of less than 1 kA/cm/sup 2/, full VCSEL structures have been grown. The 1250 nm VCSEL consists of double GaInNAs-GaAs quantum well and 1//spl Lambda/ cavity with a 39 pair bottom n-DBR and a 24 pair top p-DBR. Data will be presented on the VCSEL operating characteristics.

Keywords

III-V semiconductors; MOCVD; current density; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; optical fabrication; quantum well lasers; surface emitting lasers; 1//spl Lambda/ cavity; 1250 nm; DBR lasers; GaInNAs-GaAs; GaInNAs-GaAs quantum well; MOCVD; full VCSEL structures; long wavelength InGaAsN/GaAs edge emitting lasers; low threshold current density; Chemical lasers; Chemical vapor deposition; Gallium arsenide; MOCVD; Nitrogen; Optical materials; Quantum well lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Lasers and Applications/Ultraviolet and Blue Lasers and Their Applications/Ultralong Haul DWDM Transmission and Networking/WDM Components, 2001. Digest of the LEOS Summer Topica

Conference_Location

Copper Mountain, CO, USA

Print_ISBN

0-7803-7100-3

Type

conf

DOI

10.1109/LEOSST.2001.941894

Filename

941894