GaInNAs, a new material for long wavelength VCSELs

Author

Harris, J.S., Jr.

Author_Institution

Solid State Lab., Stanford Univ., CA, USA

fYear

2001

fDate

July 30 2001-Aug. 1 2001

Abstract

We have demonstrated low-threshold GaInNAs VCSELs operating cw at room temperature, with an emission wavelength of 1200 nm. Higher output power will be possible by reducing the resistance of the p-DBR, and 1300 nm VCSEL emission will be achieved by increasing the indium and/or nitrogen content of the GaInNAs-GaAs multiple quantum well active layer, use of GaNAs barriers, and optimized growth and annealing conditions.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser transitions; quantum well lasers; surface emitting lasers; 1200 nm; 1300 nm; 1300 nm VCSEL emission; GaInNAs; GaInNAs-GaAs multiple quantum well active layer; GaNAs barriers; annealing conditions; cw lasing; emission wavelength; long wavelength VCSELs; low-threshold GaInNAs VCSELs; optimized growth; output power; p-DBR; room temperature; Annealing; Bandwidth; Fiber lasers; Gallium arsenide; Nitrogen; Optical fiber LAN; Optical fiber communication; Plasma temperature; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Lasers and Applications/Ultraviolet and Blue Lasers and Their Applications/Ultralong Haul DWDM Transmission and Networking/WDM Components, 2001. Digest of the LEOS Summer Topica

Conference_Location

Copper Mountain, CO, USA

Print_ISBN

0-7803-7100-3

Type

conf

DOI

10.1109/LEOSST.2001.941895

Filename

941895