Title :
An analytical model for the slewing behavior of CMOS two-stage operational transconductance amplifiers
Author :
Maghari, Nima ; Yavari, Mohammad ; Shoaei, Omid
Author_Institution :
Dept. of ECE, Tehran Univ., Iran
Abstract :
This paper presents a complete time-domain model for the slewing behavior of CMOS two-stage operational transconductance amplifiers (OTAs). In this model, the effects of both first and second stage currents are included. An analytical expression is given in terms of the compensation capacitance, load capacitance and device sizes for each positive and negative slew rates. HSPICE simulation results are provided to show the validity of the proposed models using a 0.35-μm CMOS technology. These models show near perfect agreement with simulation results.
Keywords :
CMOS integrated circuits; SPICE; operational amplifiers; time-domain analysis; 0.35 micron; CMOS technology; CMOS two-stage operational transconductance amplifier; HSPICE simulation; compensation capacitance; first stage current; load capacitance; second stage current; slew rate; slewing behavior; time-domain model; Analytical models; CMOS technology; Capacitance; Integrated circuit modeling; Operational amplifiers; Semiconductor device modeling; Switched capacitor circuits; TV; Transconductance; Voltage;
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
DOI :
10.1109/ISCAS.2004.1328254
