Title :
Slurry engineering for self-stopping, dishing free SiO/sub 2/-CMP
Author :
Nojo, H. ; Kodera, M. ; Nakata, R.
Author_Institution :
Semicond. Manuf. Eng. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
A new type of slurry, in which much surfactant was added into a conventional CeO/sub 2/ slurry, was developed for SiO/sub 2/ chemical mechanical polishing (CMP). The new slurry has unique characteristics. Because the polishing rate drops as planarization progresses, polishing can stop automatically. Therefore, it is easy to control the remaining thickness. Moreover, it is possible to planarize a surface without any dishing, even at a wide depressed portion (4 mm). Therefore, the global planarization within a chip can be obtained without any stopping layer or design limitations.
Keywords :
dielectric thin films; integrated circuit technology; polishing; silicon compounds; thickness control; 0.25 mum; CMP; CeO/sub 2/; CeO/sub 2/ slurry engineering; SiO/sub 2/; SiO/sub 2/ chemical mechanical polishing; dishing free; polishing rate; self-stopping; surface planarization; surfactant addition; thickness control; wide depressed portion; Artificial intelligence; Automatic control; Laboratories; Microelectronics; Planarization; Polymers; Semiconductor device manufacture; Slurries; Thickness control; Wiring;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553600
