DocumentCode :
335532
Title :
The activation of MeV Si+ implants in SI-GaAs
Author :
Chengzhou, Ji ; Yanwen, Zhang ; Guohui, Li ; Qi, Wang ; Wenxun, Wang
Author_Institution :
Beijing Normal University, China
fYear :
1992
fDate :
21-24 Apr 1992
Firstpage :
67
Lastpage :
72
Keywords :
Atomic layer deposition; Atomic measurements; Gallium arsenide; Implants; Lattices; Nuclear physics; Rapid thermal annealing; Rapid thermal processing; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN :
0-7503-0242-9
Type :
conf
DOI :
10.1109/SIM.1992.752679
Filename :
752679
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=335532
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