• DocumentCode
    335532
  • Title

    The activation of MeV Si+ implants in SI-GaAs

  • Author

    Chengzhou, Ji ; Yanwen, Zhang ; Guohui, Li ; Qi, Wang ; Wenxun, Wang

  • Author_Institution
    Beijing Normal University, China
  • fYear
    1992
  • fDate
    21-24 Apr 1992
  • Firstpage
    67
  • Lastpage
    72
  • Keywords
    Atomic layer deposition; Atomic measurements; Gallium arsenide; Implants; Lattices; Nuclear physics; Rapid thermal annealing; Rapid thermal processing; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
  • Print_ISBN
    0-7503-0242-9
  • Type

    conf

  • DOI
    10.1109/SIM.1992.752679
  • Filename
    752679
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=335532