DocumentCode :
335535
Title :
Nondestructive high resolution resistivity topography of Semi-insulating GaAs and InP wafers
Author :
Jantz, W. ; Stibal, R. ; Windscheif, J. ; Mosel, F. ; Müller, G.
Author_Institution :
Universitat Erlangen
fYear :
1992
fDate :
21-24 Apr 1992
Firstpage :
171
Lastpage :
176
Keywords :
Annealing; Capacitors; Conductivity; Dielectric loss measurement; Dielectric measurements; Electrodes; Equivalent circuits; Gallium arsenide; Indium phosphide; Surfaces;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN :
0-7503-0242-9
Type :
conf
DOI :
10.1109/SIM.1992.752695
Filename :
752695
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=335535
بازگشت