DocumentCode :
335537
Title :
Numerical simulation of generation in n-SI-n structures
Author :
Viallet, J.E. ; Picoli, Gilbert ; Turki, Kaïs
Author_Institution :
Centre National d´´Etudes des Telecommunications - France
fYear :
1992
fDate :
21-24 Apr 1992
Firstpage :
325
Lastpage :
330
Keywords :
Boundary conditions; Charge carrier processes; Doping; Electron traps; Iron; Numerical simulation; Photorefractive effect; Poisson equations; Radiative recombination; Semiconductor materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN :
0-7503-0242-9
Type :
conf
DOI :
10.1109/SIM.1992.752719
Filename :
752719
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=335537
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