DocumentCode
3355414
Title
Femtosecond Transient Reflectivity Measurements As A Probe For Process Induced Defects In Silicon
Author
Esser, A. ; Kütt, W. ; Strahnen, M. ; Maidorn, G. ; Kurz, H.
Author_Institution
Institute of Semiconductor Electronics
fYear
1990
fDate
4-9 Nov 1990
Firstpage
582
Lastpage
583
Keywords
Charge carrier lifetime; Computerized monitoring; Delay effects; Probes; Reflectivity; Signal analysis; Signal detection; Signal resolution; Silicon; Ultrafast electronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN
0-87942-550-4
Type
conf
DOI
10.1109/LEOS.1990.690686
Filename
690686
Link To Document