Title :
Powerful semiconductor 80 kV nanosecond pulser
Author :
Efanov, V.M. ; Kardo-Sysoev, A.F. ; Larionov, M.A. ; Tchashnikov, I.G. ; Yarin, P.M. ; Kriklenko, A.V.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
June 29 1997-July 2 1997
Abstract :
The 80 kV all solid-state nanosecond pulser with rise time 0.9 ns, repetition rates up to 1 kHz and pulse duration of 2 ns is developed. As the basic switches in the generator drift step recovery diodes (DSRD) and fast ionization dynistors (FID) are used. That allows creation of the outlet power block generating voltage pulse with amplitude 80 kV, with dimensions of 150/spl times/150/spl times/100 mm. The efficiency of the generator is about 35%. As a cooling subsystem an air-oil system pumping of oil through the power block is used. Special high-voltage connectors capable of transmitting voltage pulses with amplitude up to 100 kV and edges less than 0.5 ns, are developed. An attenuator was also developed that allowed output voltage of the generator to be measured.
Keywords :
charge storage diodes; ionisation; power semiconductor switches; power supplies to apparatus; pulse generators; pulsed power switches; testing; voltage measurement; 0.5 ns; 0.9 ns; 1 kHz; 100 kV; 100 mm; 150 mm; 2 ns; 35 percent; 80 kV; air-oil system; attenuator; fast ionization dynistors; generator drift step recovery diodes; generator efficiency; high-voltage connectors; outlet power block; pulse duration; semiconductor nanosecond pulser; voltage pulse generation; Connectors; Cooling; Ionization; Petroleum; Power generation; Power semiconductor switches; Pulse generation; Semiconductor diodes; Solid state circuits; Voltage;
Conference_Titel :
Pulsed Power Conference, 1997. Digest of Technical Papers. 1997 11th IEEE International
Conference_Location :
Baltimore, MA, USA
Print_ISBN :
0-7803-4213-5
DOI :
10.1109/PPC.1997.674522
