DUV and VUV lithography application of excimer laser systems

Author

Lalovic, I.

Author_Institution

Dept. of Lithography Appl., Cymer Inc., San Diego, CA, USA

fYear

2001

fDate

July 30 2001-Aug. 1 2001

Abstract

The historical/predicted feature scaling and imaging wavelength reduction are shown. The current adoption of 193 nm wavelength illumination for 130-100 nm IC node manufacturing in 2001 and the predicted integration of 157 nm VUV illumination extend the regime of sub-wavelength imaging. Since image resolution is proportional to illumination wavelength, additional advances in the photolithography process performance enable the high rate of IC device scaling. The technological challenges in achieving the lithographic feature scaling beyond the 150 nm and 130 nm IC nodes of today are also addressed.

Keywords

excimer lasers; nanotechnology; ultraviolet lithography; 157 nm; 193 nm; DUV lithography application; VUV lithography application; energy stability; excimer laser systems; feature scaling; imaging wavelength reduction; photolithography process performance; projection imaging; pulsed emission; subwavelength imaging; Calcium; Integrated circuit technology; Laser applications; Lenses; Lighting; Lithography; Optical imaging; Optical materials; Optical refraction; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Lasers and Applications/Ultraviolet and Blue Lasers and Their Applications/Ultralong Haul DWDM Transmission and Networking/WDM Components, 2001. Digest of the LEOS Summer Topica

Conference_Location

Copper Mountain, CO, USA

Print_ISBN

0-7803-7100-3

Type

conf

DOI

10.1109/LEOSST.2001.941915

Filename

941915