Solid-state blue laser technology

Author

Chilla, J.L.A. ; Caprara, A. ; Mao, E. ; Spinelli, L. ; Seelert, W. ; Rosperich, J. ; Salokatve, A.

Author_Institution

Coherent Inc., Santa Clara, CA, USA

fYear

2001

fDate

July 30 2001-Aug. 1 2001

Abstract

The optically pumped semiconductor (OPS) chip consists of two sections, both semiconductor alloys grown by MBE epitaxy. The top section is the gain medium and the bottom section is a high reflecting mirror that constitutes one of the ends of the cavity. The gain at 976 nm is provided by narrow layers of InGaAs quantum wells, the composition of the spacer layers is chosen such as to make them transparent to the laser wavelength, and strongly absorbent to the pump wavelength (around 800 nm).

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; molecular beam epitaxial growth; optical pumping; quantum well lasers; 800 nm; 976 nm; InGaAs; InGaAs quantum well lasers; MBE epitaxy; bottom section; gain medium; high reflecting mirror; laser cavity; laser transitions; laser wavelength; optically pumped semiconductor laser chip; pump wavelength; semiconductor alloys; solid-state blue laser technology; spacer layers; top section; Epitaxial growth; Indium gallium arsenide; Mirrors; Molecular beam epitaxial growth; Optical pumping; Pump lasers; Semiconductor lasers; Semiconductor materials; Solid lasers; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Lasers and Applications/Ultraviolet and Blue Lasers and Their Applications/Ultralong Haul DWDM Transmission and Networking/WDM Components, 2001. Digest of the LEOS Summer Topica

Conference_Location

Copper Mountain, CO, USA

Print_ISBN

0-7803-7100-3

Type

conf

DOI

10.1109/LEOSST.2001.941921

Filename

941921