Ion metal plasma (IMP) deposited titanium liners for 0.25/0.18 /spl mu/m multilevel interconnections

Author

Dixit, G.A. ; Hsu, W.Y. ; Konecni, A.J. ; Krishnan, S. ; Luttmer, J.D. ; Havemann, R.H. ; Forster, J. ; Yao, G.D. ; Narasimhan, M. ; Xu, Z. ; Ramaswami, S. ; Dhen, F.S. ; Nulman, J.

Author_Institution

Semicond. Process & Device Center, Texas Instrum. Inc., Dallas, TX, USA

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

357

Lastpage

360

Abstract

An inductively coupled plasma (ICP) source is used to produce an ion metal plasma (IMP) in the PVD chamber which has excellent directionality. Compared to collimated PVD titanium liners the electrical results of 0.3 /spl mu/m contact and via structures processed with IMP deposited titanium liners show significantly improved parametrics. Due to the high bottom coverage of the IMP titanium deposition process a substantial reduction in the liner thickness is possible. Plasma damage studies using MOS capacitor structures connected to large antennae show no differences in leakage currents using the high density plasma titanium liners and the conventional collimated PVD titanium liners.

Keywords

CMOS integrated circuits; MOS capacitors; contact resistance; integrated circuit interconnections; leakage currents; plasma deposition; titanium; 0.18 mum; 0.25 mum; MOS capacitor structures; PVD chamber; Ti; bottom coverage; contact resistance distribution; contact structures; directionality; double level metal salicided CMOS flow; improved parametrics; inductively coupled plasma source; ion metal plasma deposited Ti liners; leakage currents; liner thickness reduction; multilevel interconnections; plasma damage; via structures; Atherosclerosis; Chemical vapor deposition; Collimators; Etching; Plasma applications; Plasma density; Plasma materials processing; Plasma temperature; Plugs; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553602

Filename

553602