DocumentCode
3355938
Title
Photoluminescence Of Si:As And Si:B Grown By Molecular Beam Epitaxy
Author
Rowell, N.L. ; Nodl, J.-P. ; Houghton, D.C.
Author_Institution
National Research Council
fYear
1990
fDate
4-9 Nov 1990
Firstpage
590
Lastpage
591
Keywords
Annealing; Councils; Doping; Excitons; Fourier transforms; Ion beams; Molecular beam epitaxial growth; Photoluminescence; Semiconductor films; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN
0-87942-550-4
Type
conf
DOI
10.1109/LEOS.1990.690689
Filename
690689
Link To Document