DocumentCode :
3355938
Title :
Photoluminescence Of Si:As And Si:B Grown By Molecular Beam Epitaxy
Author :
Rowell, N.L. ; Nodl, J.-P. ; Houghton, D.C.
Author_Institution :
National Research Council
fYear :
1990
fDate :
4-9 Nov 1990
Firstpage :
590
Lastpage :
591
Keywords :
Annealing; Councils; Doping; Excitons; Fourier transforms; Ion beams; Molecular beam epitaxial growth; Photoluminescence; Semiconductor films; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN :
0-87942-550-4
Type :
conf
DOI :
10.1109/LEOS.1990.690689
Filename :
690689
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3355938
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