Title :
Barrier metal free copper damascene interconnection technology using atmospheric copper reflow and nitrogen doping in SiOF film
Author :
Mikagi, K. ; Ishikawa, H. ; Usami, T. ; Suzuki, M. ; Inoue, K. ; Oda, N. ; Chikaki, S. ; Sakai, I. ; Kikkawa, T.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Kanagawa, Japan
Abstract :
This paper describes a barrier metal free copper damascene interconnection technology using atmospheric copper reflow and nitrogen doping in SiOF films for improvement of RC delay. Formation of a thin barrier layer for copper on the surface of SiOF film was achieved by NH/sub 3/ plasma treatment. Barrier metal free copper damascene interconnects having a resistivity of 1.8/spl plusmn/0.03 /spl mu//spl Omega//spl middot/cm, lower than that of Cu/TiN structures, were successfully fabricated without peeling-off failures. By use of this structure, a 25% reduction for Tpd in a 0.18 /spl mu/m CMOS technology, compared with that of the Cu/TiN structure, was confirmed by SPICE simulation.
Keywords :
CMOS integrated circuits; SPICE; circuit analysis computing; copper; diffusion barriers; electrical resistivity; integrated circuit interconnections; integrated circuit technology; leakage currents; silicon compounds; surface treatment; 0.18 mum; 1.8 muohmcm; CMOS technology; Cu; Cu/TiN structures; N doping; NH/sub 3/; NH/sub 3/ plasma treatment; RC delay; SPICE simulation; SiOF:N; SiOF:N film; atmospheric Cu reflow; barrier metal free Cu damascene interconnection technology; effective wiring resistivity; leakage current characteristics; thin barrier layer; CMOS technology; Conductivity; Copper; Delay; Doping; Nitrogen; Plasmas; SPICE; Surface treatment; Tin;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553604
