Characterization Of Damage Of Ion Implanted Silicon By Thermal Wave Technology And Scanning Raman Microscopy

Author

Inoue, M. ; Ishikawa, K. ; Yoshida, M. ; Nakashima, S. ; Mizoguchi, K.

Author_Institution

Matsushita Electronics

fYear

1990

fDate

4-9 Nov 1990

Firstpage

596

Lastpage

597

Keywords

Annealing; Boron; Ion implantation; Laboratories; Lattices; Monitoring; Physics; Raman scattering; Silicon; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE

Print_ISBN

0-87942-550-4

Type

DOI

10.1109/LEOS.1990.690691

Filename

690691

Link To Document