DocumentCode
3356309
Title
Structure and nonlinear refraction of nanocrystal SiC thin films
Author
Brodyn, M.S. ; Borshch, A.A. ; Volkov, V.I. ; Liahoveckyi, V.R. ; Rudenko, V.I. ; Semenov, Alexander V. ; Puzikov, V.M.
Author_Institution
Inst. of Phys., NAS of Ukraine, Kiev
fYear
2008
fDate
Sept. 29 2008-Oct. 4 2008
Firstpage
431
Lastpage
431
Abstract
Summary form only given. Silicon carbide nanocrystal films have been synthesized by new original technique of direct ion deposition. Composition and structure of bonds between carbon and silicon atoms have been studied by means of photo-electron spectroscopy using XPS-800 Kratos spectrometer with MgK radiation. The spectra have been calibrated using data obtained for bond energies for reference SiC samples. The obtained films crystal structure has been studied by means of X-ray diffraction (DRON-2.0, CuK). The mean size of SiC nanocrystals was about 6-7 nm by Sherer formula estimation. The nonlinear refraction in nanocrystalline films of SiC has been studied by means of contemporary techniques. As a source of irradiation we used frequency doubled pulsed YAG:Nd laser. Experimentally have been shown that the nanocrystal films of SiC exhibit very high optical nonlinear response. Possible mechanisms of optical nonlinearity are discussed especially ones connected with the contribution of conducting electrons.
Keywords
X-ray diffraction; light diffraction; nanostructured materials; nonlinear optics; semiconductor thin films; silicon compounds; wide band gap semiconductors; DRON-2.0; MgK radiation; Sherer formula estimation; SiC; X-ray diffraction; XPS-800Kratos spectrometer; bond energies; carbon atoms; conducting electrons; direct ion deposition; films crystal structure; frequency doubled pulsed YAG:Nd laser; nanocrystal thin films; nonlinear refraction; optical nonlinearity; photo-electron spectroscopy; silicon atoms; silicon carbide nanocrystal films; Electron optics; Nanocrystals; Nonlinear optics; Optical films; Optical harmonic generation; Optical refraction; Semiconductor films; Silicon carbide; Spectroscopy; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on
Conference_Location
Crimea
Print_ISBN
978-1-4244-1973-9
Electronic_ISBN
978-1-4244-1974-6
Type
conf
DOI
10.1109/CAOL.2008.4671865
Filename
4671865
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