Scintillation properties of Ce doped (Lu,Gd)3(Ga,Al)5O12 single crystal grown by the micro-puling-down method

In this report, the Ce: (Lu,Gd)₃(Ga,Al)₅O₁₂ single crystal were grown by the micro-pulling down (m-PD) method. Luminescence and scintillation properties were measured. The substitution at the Al³⁺ sites by Ga³⁺ and at the Lu³⁺ sites by Gd³⁺ in garnet structure has been studied. In these crystals, Ce³⁺ 4f-5d emission is observed with 500-530nm wavelength. Emission peak shifts to shorter wavelength and the decay accelerates with increasing Ga concentration. In the case of Ce: Lu₂Gd₁(Ga,Al)₅O₁₂ series, Ce: Lu₂Gd₁Ga₃Al₂O₁₂ shows highest emission intensity. The light yield of Ce: Lu₂Gd₁Ga₃Al₂O₁₂ sample with 3mmφ×1mm size was around 30,000 photon/MeV using calibration from ⁵⁵Fe direct irradiation peak to APD. Scintillation decay time was around 50ns. Density is theoretically 7.1g/cm³.