DocumentCode
3356678
Title
Is there experimental evidence for a difference between surface and bulk impact ionization in silicon?
Author
Jungemann, C. ; Yamaguchi, S. ; Goto, H.
Author_Institution
Fujitsu Ltd., Kawasaki, Japan
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
383
Lastpage
386
Abstract
In previous works a difference between surface (MOS devices) and bulk (bipolar devices) impact ionization (II) has been found. It is shown that this difference is the result of inadequate II models used to interpret the experimental data and not due to unknown or new physical effects in MOS devices. Utilizing a Full Band Monte Carlo program experimental results for bulk systems and MOS devices are reproduced without assuming a difference between surface and bulk II.
Keywords
MOSFET; Monte Carlo methods; elemental semiconductors; impact ionisation; semiconductor device models; silicon; II models; MOS devices; NMOSFETs; Si; bipolar devices; bulk impact ionization; full band Monte Carlo program; surface impact ionization; Electrons; FETs; Impact ionization; MOS devices; MOSFETs; Monte Carlo methods; Postal services; Rough surfaces; Silicon; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.553608
Filename
553608
Link To Document