DocumentCode
3356824
Title
Temperature dependence of electron mobility in Bi /sub 12/ Ge O /sub 20/ and Bi /sub 12/ Si O/sub 20/ with use of the time-of-flight technique
Author
Bloom, Dan ; McKeever, S.W.S.
Author_Institution
Department of Physics, Oklahoma State University
Volume
11
fYear
1997
fDate
18-23 May 1997
Firstpage
112
Lastpage
113
Keywords
Bismuth; Electron mobility; Material storage; Optical materials; Optical mixing; Optical pulse generation; Photorefractive effect; Photorefractive materials; Temperature dependence; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
0-7803-4125-2
Type
conf
DOI
10.1109/CLEO.1997.602322
Filename
602322
Link To Document