Title :
Temperature dependence of electron mobility in Bi /sub 12/ Ge O /sub 20/ and Bi /sub 12/ Si O/sub 20/ with use of the time-of-flight technique
Author :
Bloom, Dan ; McKeever, S.W.S.
Author_Institution :
Department of Physics, Oklahoma State University
Keywords :
Bismuth; Electron mobility; Material storage; Optical materials; Optical mixing; Optical pulse generation; Photorefractive effect; Photorefractive materials; Temperature dependence; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4125-2
DOI :
10.1109/CLEO.1997.602322
