Title :
Scattering theory of the short channel MOSFET
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
A simple, physical approach for modeling ultrasubmicron MOSFETs is introduced. The approach, based on scattering probabilities, produces analytical results that reduce to conventional ones for long channel devices but which apply to ballistic MOSFETs as well. The new model is related to conventional models, and issues such as the role of inversion layer mobility, velocity overshoot, and identifying the maximum saturated drain current, are addressed.
Keywords :
MOSFET; carrier mobility; elemental semiconductors; inversion layers; semiconductor device models; silicon; Si; ballistic MOSFETs; inversion layer mobility; maximum saturated drain current; scattering probabilities; short channel MOSFET; ultrasubmicron MOSFETs; velocity overshoot; Acoustic scattering; Analytical models; Delay; Electrons; Equations; MOSFET circuits; Physics computing; Reservoirs; Technology management; Voltage;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553609
