A lateral-BJT-biased CMOS voltage-controlled oscillator

Author

Aniruddhan, Sankaran ; Chu, Min ; Allstot, David J.

Author_Institution

Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA

Volume

1

fYear

2004

fDate

23-26 May 2004

Abstract

A fully integrated 5 GHz differential LC-VCO using a lateral pnp current source in 250nm CMOS is presented. The lateral PNP device structure and its characteristics reviewed. The use of lateral BJT current sources in VCOs reduces flicker noise up-conversion, which is a critical need for systems with stringent close-in phase noise specifications. The VCO achieves a simulated phase noise of -93dBC/Hz at 100kHz offset and draws 4mA from a single 2.5V power supply; the VCO tuning range is 18%.

Keywords

CMOS integrated circuits; bipolar transistors; phase noise; radiofrequency integrated circuits; voltage-controlled oscillators; 100 kHz; 2.5 V; 250 nm; 4 mA; CMOS voltage-controlled oscillator; LC tank circuits; PNP device structure; RF integrated circuits; differential LC-VCO; flicker noise up-conversion; lateral BJT current sources; lateral pnp current source; phase noise specifications; resonant circuits; tuning range; 1f noise; Bipolar transistors; CMOS analog integrated circuits; CMOS technology; Integrated circuit technology; MOSFETs; Phase noise; RLC circuits; Radio frequency; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on

Print_ISBN

0-7803-8251-X

Type

conf

DOI

10.1109/ISCAS.2004.1328360

Filename

1328360