Title :
Influence of inter-quantum-well coulomb interaction on gain spectra of InGaN/GaN MQW structures
Author :
Klymenko, M.V. ; Sukhoivanov, I.A.
Author_Institution :
Lab. "Photonics", Kharkov Nat. Univ. of Radio Electron., Kharkov
fDate :
Sept. 29 2008-Oct. 4 2008
Abstract :
Semiconductor quantum well structures based on InGaN/GaN materials are characterized by the piezoelectric and spontaneous polarizations. At high level of excitations, fields caused by the polarizations are screened by carriers confined in quantum wells. In our work, we consider additional effect in multiple-quantum wells caused by Coulomb interactions of carriers positioned in neighboring quantum wells. It is shown that inter-quantum-well Coulomb interactions effects on absorption/gain spectra. It is shown that the double-quantum-well InGaN/GaN structure is characterized by reducing of the optical gain due to inter-quantum-well Coulomb interactions.
Keywords :
Coulomb blockade; III-V semiconductors; gallium compounds; indium compounds; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; absorption/gain spectra; double-quantum-well structure; inter-quantum-well Coulomb interaction; multiple quantum well structures; multiple quantum wells; piezoelectric polarization; semiconductor quantum well structures; spontaneous polarization; Gallium nitride; Interpolation; Photonics; Piezoelectric materials; Piezoelectric polarization; Poisson equations; Quantum computing; Quantum dots; Quantum well devices; Semiconductor materials; gain spectrum; piezoelectric polarization; semiconductor Bloch equations; spontaneous polarization;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on
Conference_Location :
Crimea
Print_ISBN :
978-1-4244-1973-9
Electronic_ISBN :
978-1-4244-1974-6
DOI :
10.1109/CAOL.2008.4671901
