• DocumentCode
    3356968
  • Title

    Nonlinear gain and output power characteristics of quantum-well sources

  • Author

    Kononenko, Valerii K.

  • Author_Institution
    Stepanov Inst. of Phys. NASB, Minsk
  • fYear
    2008
  • fDate
    Sept. 29 2008-Oct. 4 2008
  • Firstpage
    239
  • Lastpage
    241
  • Abstract
    The gain saturation in quantum-well heterostructures under the change in the populations of the subband levels is described in detail. The nonlinearity parameters are introduced and their change with the pump, radiation frequency, temperature, polarization, and the quantum-well level distribution is examined. The main attention is given to quantum-well heterostructure sources based on III-V compounds, including GaInAsSb, GaInAs, GaInAsP, GaAs, and GaInN, which emit in the spectral interval from the mid-infrared to visible light.
  • Keywords
    III-V semiconductors; nonlinear optics; quantum well lasers; III-V compounds; gain saturation; laser diode; nonlinear gain; nonlinearity parameters; output power characteristics; quantum-well heterostructures; quantum-well level distribution; quantum-well sources; radiation frequency; Frequency; Nonlinear optics; Optical amplifiers; Optical polarization; Optical refraction; Optical saturation; Power generation; Quantum well lasers; Quantum wells; Temperature distribution; amplifier; gain saturation; laser diode; nonlinearity parameter; quantum well;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on
  • Conference_Location
    Crimea
  • Print_ISBN
    978-1-4244-1973-9
  • Electronic_ISBN
    978-1-4244-1974-6
  • Type

    conf

  • DOI
    10.1109/CAOL.2008.4671904
  • Filename
    4671904