DocumentCode
3357075
Title
Understanding the differences in the effective-field dependence of electron and hole inversion layer mobilities
Author
Jallepalli, S. ; Shih, W.-K. ; Bude, J.D. ; Pinto, M.R. ; Maziar, C.M. ; Tasch, A.F., Jr.
Author_Institution
Texas Univ., Austin, TX, USA
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
391
Lastpage
394
Abstract
For the first time, results from a first-principles study of carrier quantization are coupled to realistic Monte Carlo (MC) simulations to investigate MOS inversion layer electron and hole mobilities. These simulations provide insights into the source of the differences between the effective-field dependencies of electron (inverse square) and hole (inverse linear) inversion layer mobilities at high effective-fields.
Keywords
MIS devices; Monte Carlo methods; electron mobility; hole mobility; inversion layers; MOS inversion layer; Monte Carlo simulations; carrier quantization; effective-field dependence; effective-field dependencies; electron mobility; hole mobility; inverse linear mobilities; inverse square mobilities; inversion layer mobilities; Charge carrier processes; Couplings; Dispersion; Displays; Effective mass; Electron mobility; Feeds; Light scattering; Monte Carlo methods; Quantization;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.553610
Filename
553610
Link To Document